
SK hynix has developed a new UFS 4.1 memory product optimized for on-device AI, featuring a 7% improvement in power efficiency and a 15% reduction in thickness to 0.85mm for ultra-slim smartphones; the product boasts a sequential read speed of 4300MB/s and improves random read and write speeds by 15% and 40% respectively, with mass production of the 512GB and 1TB capacity types slated for Q1 2025.
SK hynix has announced the development of a new UFS 4.1 NAND flash memory solution, optimized for on-device AI, underscoring its strategy to enhance its leadership as a full-stack AI memory provider, a portfolio that includes its world’s highest 321-layer product. This UFS 4.1, an evolution from its 238-layer NAND based predecessor, directly addresses the escalating requirements for high-performance, low-power memory in ultra-slim flagship smartphones. The product features a 7% improvement in power efficiency and a 15% reduction in thickness to 0.85mm. Performance metrics are also strong, with a sequential read speed of 4300MB/s—the fastest for fourth-generation UFS—and enhancements in random read and write speeds by 15% and 40% respectively, critical for AI workloads and multitasking. SK hynix plans for customer qualification within the year and aims for volume shipments of the 512GB and 1TB capacity options starting in Q1 2025, positioning the company to capitalize on the growing integration of on-device AI in the mobile sector.
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