NoMIS Power Demonstrates 6.5 kV SiC MOSFET, Advancing a High-Voltage Roadmap to 10 kV and 20 kV SiC IGBTs

NoMIS Power reported initial 6.5 kV SiC device results demonstrating performance up to 8 kV blocking with 90 mΩ on-resistance and 55 A current capability. The company positions itself as a U.S. high-voltage SiC supplier, with a roadmap to 10 kV SiC MOSFETs and 20 kV SiC IGBTs.

Analysis

NoMIS Power reported initial 6.5 kV SiC device results demonstrating performance up to 8 kV blocking with 90 mΩ on-resistance and 55 A current capability. The company positions itself as a U.S. high-voltage SiC supplier, with a roadmap to 10 kV SiC MOSFETs and 20 kV SiC IGBTs.