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Renesas Unveils Industry's First 650V GaN in Dual-Side Cooled 8x8mm Package for Megawatt-Scale AI Data Centers
Source: Business Wire
Artificial IntelligenceTechnology & InnovationProduct Launches
Renesas launched what it calls the industry's first 650V gallium-nitride (GaN) power device with dual-side cooling, targeting high-density power conversion in 800V AI data-center architectures. The product could improve thermal management and power density for AI infrastructure, strengthening Renesas's positioning in the data-center power semiconductor market.
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